SLC NAND交叉参考工具

本SLC NAND交叉参考工具旨在为十博公司的产品与市场上其他可供选择的产品进行比较提供总体概述. 这些信息是基于竞争对手公布的数据,并没有经过十博的核实. 十博对该准确性不作任何陈述或保证, equivalency, 任何参考产品在任何特定应用或使用中的互换性或适用性. 请参阅Micron的数据表,以承受Micron产品对您的应用或使用的兼容性. 帮助您选择正确的SLC NAND产品 请输入至少5个字符 竞争对手的SLC NAND零件号,以找到十博的替代品.
微米零件号 竞争对手零件号 Competitor Density Org. Vcc Range Temperature 方案描述 ECC的要求 Die in Package Page Size
MT29F16G08ABACAWP-ITZ: C K9WAG08U1F-SIB0 Samsung 16Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8 bit ECC 1 4K TSOP
MT29F16G08ABACAWP-ITZ: C TH58NVG4S0HTA20 Toshiba 16Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8 bit ECC 1 4K TSOP
MT29F16G08ABACAWP-ITZ: C TH58NVG4S0HTAK0 Toshiba 16Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8 bit ECC 1 4K TSOP
MT29F1G01ABAFDWB-IT: F TC58CVG0S3HRAIJ Toshiba 1Gb x1 2.7 ~ 3.6V -40 ~ 85 °C 6 x8x0 DFN (WSON8).65 8位ECC或On-Die ECC 1 2K WSON8
MT29F1G01ABBFDWB-IT: F TC58CYG0S3HRAIJ Toshiba 1Gb x1 1.7 ~ 1.95V -40 ~ 85 °C 6 x8x0 DFN (WSON8).65 8位ECC或On-Die ECC 1 2K WSON8
MT29F1G08ABAEAH4-ITX: E H27U1G8F2B Hynix 1Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 4 bit ECC 1 2K FBGA
MT29F1G08ABAEAH4-ITX: E H27U1G8F2C Hynix 1Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 4 bit ECC 1 2K FBGA
MT29F1G08ABAEAH4-ITX: E TC58NVG0S3HBAI6 Toshiba 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 4 bit ECC 1 2K FBGA
MT29F1G08ABAEAWP-ITX: E H27U1G8F2B Hynix 1Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 4 bit ECC 1 2K TSOP
MT29F1G08ABAEAWP-ITX: E H27U1G8F2C Hynix 1Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 4 bit ECC 1 2K TSOP
MT29F1G08ABAEAWP-ITX: E TC58NVG0S3HTA00 Toshiba 1Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 4 bit ECC 1 2K TSOP
MT29F1G08ABAEAWP-ITX: E TC58NVG0S3HTAI0 Toshiba 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 4 bit ECC 1 2K TSOP
MT29F1G08ABAFAH4-ITE: F H27U1G8F2B Hynix 1Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABAFAH4-ITE: F H27U1G8F2C Hynix 1Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABAFAH4-ITE: F K9F1G08U0F-5IB0 Samsung 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABAFAH4-ITE: F TC58BVG0S3HBAI4 Toshiba 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABAFAH4-ITE: F TC58BVG0S3HBAI6 Toshiba 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABAFAH4-ITE: F TC58NVG0S3HBAI4 Toshiba 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABAFAH4-ITE: F TC58NVG0S3HBAI6 Toshiba 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABAFAWP-ITE: F H27U1G8F2B Hynix 1Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F1G08ABAFAWP-ITE: F H27U1G8F2C Hynix 1Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F1G08ABAFAWP-ITE: F K9F1G08U0F-SIB0 Samsung 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F1G08ABAFAWP-ITE: F TC58BVG0S3HTA00 Toshiba 1Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F1G08ABAFAWP-ITE: F TC58BVG0S3HTAI0 Toshiba 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F1G08ABAFAWP-ITE: F TC58NVG0S3HTA00 Toshiba 1Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F1G08ABAFAWP-ITE: F TC58NVG0S3HTAI0 Toshiba 1Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F1G08ABBEAH4-ITX: E H27S1G8F2B Hynix 1Gb x8 1.8V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 4 bit ECC 1 2K FBGA
MT29F1G08ABBEAH4-ITX: E H27S1G8F2C Hynix 1Gb x8 1.8V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 4 bit ECC 1 2K FBGA
MT29F1G08ABBEAH4-ITX: E TC58NYG0S3HBAI4 Toshiba 1Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 4 bit ECC 1 4K FBGA
MT29F1G08ABBEAH4-ITX: E TC58NYG0S3HBAI6 Toshiba 1Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 4 bit ECC 1 4K FBGA
MT29F1G08ABBFAH4-ITE: F H27S1G8F2B Hynix 1Gb x8 1.8V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABBFAH4-ITE: F H27S1G8F2C Hynix 1Gb x8 1.8V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABBFAH4-ITE: F TC58BYG0S3HBAI4 Toshiba 1Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABBFAH4-ITE: F TC58BYG0S3HBAI6 Toshiba 1Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F1G08ABBFAH4-ITE: F TC58NYG0S3HBAI4 Toshiba 1Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F1G08ABBFAH4-ITE: F TC58NYG0S3HBAI6 Toshiba 1Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F2G01ABAGDWB-IT: G TC58CVG1S3HRAIJ Toshiba 2Gb x1 2.7 ~ 3.6V -40 ~ 85 °C 6 x8x0 DFN (WSON8).65 8位ECC或On-Die ECC 1 2K WSON8
MT29F2G01ABBGDWB-IT: G TC58CYG1S3HRAIJ Toshiba 2Gb x1 1.7 ~ 1.95V -40 ~ 85 °C 6 x8x0 DFN (WSON8).65 8位ECC或On-Die ECC 1 2K WSON8
MT29F2G08ABAGAH4-IT: G H27U2G8F2C Hynix 2Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABAGAH4-IT: G H27U2G8F2D Hynix 2Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABAGAH4-IT: G K9F2G08U0D-5IB0 Samsung 2Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABAGAH4-IT: G TC58BVG1S3HBAI4 Toshiba 2Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABAGAH4-IT: G TC58BVG1S3HBAI6 Toshiba 2Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABAGAH4-IT: G TC58NVG1S3HBAI4 Toshiba 2Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABAGAH4-IT: G TC58NVG1S3HBAI6 Toshiba 2Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABAGAWP-IT: G H27U2G8F2C Hynix 2Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F2G08ABAGAWP-IT: G H27U2G8F2D Hynix 2Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F2G08ABAGAWP-IT: G K9F2G08U0D-SIB0 Samsung 2Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F2G08ABAGAWP-IT: G TC58BVG1S3HTA00 Toshiba 2Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F2G08ABAGAWP-IT: G TC58BVG1S3HTAI0 Toshiba 2Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F2G08ABAGAWP-IT: G TC58NVG1S3HTA00 Toshiba 2Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F2G08ABAGAWP-IT: G TC58NVG1S3HTAI0 Toshiba 2Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 2K TSOP
MT29F2G08ABBGAH4-IT: G H27S2G8F2C Hynix 2Gb x8 1.8V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABBGAH4-IT: G H27S2G8F2D Hynix 2Gb x8 1.8V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABBGAH4-IT: G TC58BYG1S3HBAI4 Toshiba 2Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABBGAH4-IT: G TC58BYG1S3HBAI6 Toshiba 2Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABBGAH4-IT: G TC58NYG1S3HBAI4 Toshiba 2Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F2G08ABBGAH4-IT: G TC58NYG1S3HBAI6 Toshiba 2Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 2K FBGA
MT29F4G01ABAFDWB-IT: F TC58CVG2S0HRAIJ Toshiba 4Gb x1 2.7 ~ 3.6V -40 ~ 85 °C 6 x8x0 DFN (WSON8).65 8位ECC或On-Die ECC 1 4K WSON8
MT29F4G01ABBFDWB-IT: F TC58CYG2S0HRAIJ Toshiba 4Gb x1 1.7 ~ 1.95V -40 ~ 85 °C 6 x8x0 DFN (WSON8).65 8位ECC或On-Die ECC 1 4K WSON8
MT29F4G08ABAFAH4-IT: F H27U4G(O/8)F2G Hynix 4Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABAFAH4-IT: F H27U4G8F2D Hynix 4Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABAFAH4-IT: F H27U4G8F2E Hynix 4Gb x8 3.3V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABAFAH4-IT: F K9F4G08U0F-5IB0 Samsung 4Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABAFAH4-IT: F TC58BVG2S0HBAI4 Toshiba 4Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABAFAH4-IT: F TC58BVG2S0HBAI6 Toshiba 4Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABAFAH4-IT: F TC58NVG2S0HBAI4 Toshiba 4Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABAFAH4-IT: F TC58NVG2S0HBAI6 Toshiba 4Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABAFAWP-IT: F H27U4G(O/8)F2G Hynix 4Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 4K TSOP
MT29F4G08ABAFAWP-IT: F H27U4G8F2D Hynix 4Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 4K TSOP
MT29F4G08ABAFAWP-IT: F H27U4G8F2E Hynix 4Gb x8 3.3V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 4K TSOP
MT29F4G08ABAFAWP-IT: F K9F4G08U0F-SIB0 Samsung 4Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 4K TSOP
MT29F4G08ABAFAWP-IT: F TC58BVG2S0HTA00 Toshiba 4Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 4K TSOP
MT29F4G08ABAFAWP-IT: F TC58BVG2S0HTAI0 Toshiba 4Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 4K TSOP
MT29F4G08ABAFAWP-IT: F TC58NVG2S0HTA00 Toshiba 4Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 4K TSOP
MT29F4G08ABAFAWP-IT: F TC58NVG2S0HTAI0 Toshiba 4Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 1 4K TSOP
MT29F4G08ABBFAH4-IT: F H27S4G8F2E Hynix 4Gb x8 1.8V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABBFAH4-IT: F TC58BYG2S0HBAI4 Toshiba 4Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABBFAH4-IT: F TC58BYG2S0HBAI6 Toshiba 4Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABBFAH4-IT: F TC58NYG2S0HBAI4 Toshiba 4Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F4G08ABBFAH4-IT: F TC58NYG2S0HBAI6 Toshiba 4Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 1 4K FBGA
MT29F8G01ADAFD12-IT: F TH58CVG3S0HRAIJ Toshiba 8Gb x1 2.7 ~ 3.6V -40 ~ 85 °C TBGA 6x8x1.2 8位ECC或On-Die ECC 1 4K WSON8
MT29F8G01ADBFD12-IT: F TH58CYG3S0HRAIJ Toshiba 8Gb x1 1.7 ~ 1.95V -40 ~ 85 °C TBGA 6x8x1.2 8位ECC或On-Die ECC 1 4K WSON8
MT29F8G08ABACAH4-IT: C TH58NVG3S0HBAI4 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8 bit ECC 1 4K FBGA
MT29F8G08ABACAH4-IT: C TH58NVG3S0HBAI6 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8 bit ECC 1 4K FBGA
MT29F8G08ABACAWP-IT: C TH58NVG3S0HTA00 Toshiba 8Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8 bit ECC 1 4K TSOP
MT29F8G08ABACAWP-IT: C TH58NVG3S0HTAI0 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8 bit ECC 1 4K TSOP
MT29F8G08ABBCAH4-IT: C TH58BYG3S0HBAI4 Toshiba 8Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8 bit ECC 1 4K FBGA
MT29F8G08ABBCAH4-IT: C TH58BYG3S0HBAI6 Toshiba 8Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8 bit ECC 1 4K FBGA
MT29F8G08ABBCAH4-IT: C TH58NYG3S0HBAI4 Toshiba 8Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8 bit ECC 1 4K FBGA
MT29F8G08ABBCAH4-IT: C TH58NYG3S0HBAI4 Toshiba 8Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8 bit ECC 1 4K FBGA
MT29F8G08ABBCAH4-IT: C TH58NYG3S0HBAI6 Toshiba 8Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8 bit ECC 1 4K FBGA
MT29F8G08ABBCAH4-IT: C TH58NYG3S0HBAI6 Toshiba 8Gb x8 1.7 ~ 1.95V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8 bit ECC 1 4K FBGA
MT29F8G08ADAFAH4-AAT: F K9F8G08U0F-5IB0 Samsung 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 2 4K FBGA
MT29F8G08ADAFAH4-AAT: F TH58BVG3S0HBAI4 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 2 4K FBGA
MT29F8G08ADAFAH4-AAT: F TH58BVG3S0HBAI6 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 2 4K FBGA
MT29F8G08ADAFAH4-AAT: F TH58NVG3S0HBAI4 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 2 4K FBGA
MT29F8G08ADAFAH4-AAT: F TH58NVG3S0HBAI6 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 63/120 VFBGA 9 x11x1 8位ECC或On-Die ECC 2 4K FBGA
MT29F8G08ADAFAWP-AIT: F K9K8G08U0F-SIB0 Samsung 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 2 4K TSOP
MT29F8G08ADAFAWP-AIT: F TH58BVG3S0HTA00 Toshiba 8Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 2 4K TSOP
MT29F8G08ADAFAWP-AIT: F TH58BVG3S0HTAI0 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 2 4K TSOP
MT29F8G08ADAFAWP-AIT: F TH58NVG3S0HTA00 Toshiba 8Gb x8 2.7 ~ 3.6V 0 ~ 70 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 2 4K TSOP
MT29F8G08ADAFAWP-AIT: F TH58NVG3S0HTAI0 Toshiba 8Gb x8 2.7 ~ 3.6V -40 ~ 85 °C 48 TSOP 12 x20x1.2 8位ECC或On-Die ECC 2 4K TSOP
Not Support H27S1G8F2B Hynix 1Gb x8 1.8V -40 ~ 85 °C N/A N/A N/A N/A TSOP
Not Support H27S1G8F2C Hynix 1Gb x8 1.8V -40 ~ 85 °C N/A N/A N/A N/A TSOP
Not Support H27S2G8F2C Hynix 2Gb x8 1.8V -40 ~ 85 °C N/A N/A N/A N/A TSOP
Not Support H27S2G8F2D Hynix 2Gb x8 1.8V -40 ~ 85 °C N/A N/A N/A N/A TSOP
Not Support H27S4G8F2E Hynix 4Gb x8 1.8V -40 ~ 85 °C N/A N/A N/A N/A TSOP
没有配套的产品.
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